Nonequilibrium Carrier Dynamics in Semiconductors Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA (Springer Proceedings in Physics)

Cover of: Nonequilibrium Carrier Dynamics in Semiconductors |

Published by Springer .

Written in English

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Subjects:

  • Semi-conductors & super-conductors,
  • Physics,
  • Science,
  • Science/Mathematics,
  • Material Science,
  • Optics,
  • Technology / Material Science,
  • carrier transport,
  • optoelectronics,
  • semi conductors,
  • spintronics

Edition Notes

Book details

ContributionsMarco Saraniti (Editor), Umberto Ravaioli (Editor)
The Physical Object
FormatHardcover
Number of Pages372
ID Numbers
Open LibraryOL9056698M
ISBN 103540365877
ISBN 109783540365877

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"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information : Hardcover.

Originally known as "Hot Carriers in Semiconductors," the 14th conference in the series covered a wide spectrum of traditional topics Nonequilibrium Carrier Dynamics in Semiconductors book with non-equilibrium phenomena, ranging from quantum transport to optical phenomena in mesoscopic and nano-scale structures.

Particular attention was given this time to emerging areas of this rapidly evolving field, with many sessions covering terahertz devices, high field transport in nitride semiconductors. "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.

Request PDF | On Jan 1,Marco Saraniti and others published Nonequilibrium Carrier Dynamics in Semiconductors | Find, read and cite all the Nonequilibrium Carrier Dynamics in Semiconductors book you need on ResearchGate.

Ultra short, intense pulse-excitation experiments in passive semiconductors have shown that carrier-carrier Coulomb scattering and carrier-LO phonon scattering provide very efficient relaxation processes of nonequilibrium carriers in semiconductors.

In semiconductor lasers these relaxation processes have to compete with the stimulated recombination of carriers and the pump process due to Author: F.

Jahnke, S. Koch, U. Mohideen, R. Slusher. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells.

Semiconductor disk lasers have been shown to be ideal as wavelength-agile, high-brightness sources for producing high average power under various pulsed mode-locking scenarios. Systematic microscopic modeling reveals that ultrafast nonequilibrium kinetic hole burning in electron/hole carrier distributions dictates the outcome of femtosecond duration mode-locked pulse formation.

Nonequilibrium carrier-phonon coupling in a semiconductor quantum well. We discuss an approach proposed recently by us for the description of hot phonon dynamics in heterolayers.

The nonequilibrium phonons are described as excitations localized near the carrier layer and a kinetic equation for these “phonon wavepacket” is obtained. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics.

In eight authoritative chapters illustrated by more than figures, this book spans a broad range of new techniques and advances. Nonequilibrium excess carrier in semiconductor W.K.

Chen Electrophysics, NCTU 2 Ambipolar transport Excess electrons and excess holes do not move independently of each other. They diffuse, drift, and recombine with same effective diffusion coefficient, drift mobility and lifetime.

This phenomenon is called ambipolar Size: KB. Picosecond and more recently femtosecond spectroscopy has established as a powerful tool for the direct investigation of the dynamics of nonequilibrium charge carriers and phonons in semiconductors.

In this paper we will discuss some recent results of the effect of localization of electronic states on carrier : E. Göbel, J. Kuhl, R. Höger. This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots.

The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based by:   In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding by: Description of non-equilibrium charge carrier dynamics in semiconductors is important for the improvement of photovoltaic efficiency and the characterization of impurity content as well as for the understanding of the underlying physical phenomena.

The recombination properties of the charge carriers can be conveniently characterized using. This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based : Springer International Publishing.

Hot carrier steady state and transient transport in bulk semiconductors and heterostructures is analyzed here using a general balance equation formulation with nonequilibrium phonon occupation and an ambient magnetic field of arbitrary strength.

Nonequilibrium Carrier Dynamics in Transition Metal Dichalcogenide Semiconductors semiconductor systems on the basis of a material-realistic ab-initio description of the electronic band structure and Coulomb interaction in combination with a many-body theory of carrier dynamics.

The e ciency of carrier re-Cited by: Despite substantial research over the past 30 years on the ultrafast, nonequilibrium carrier relaxation dynamics in semiconductors, a comprehensive theoretical understanding of complex particle dynamics in low-dimensional nanostructured materials, which amplify the effects of external driving forces and suppress energy relaxation channels, is far from complete.

Nonequilibrium carrier dynamics in semiconductors and ultrasmall devices Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices M. Koyama. "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.

Nonlinear carrier dynamics, caused by low-temperature impact ionization avalanche of impurities in extrinsic semiconductors, and the emergence of intractable chaos are treated in detail. The book explores impact ionization models, linear stability analysis, bifurcation theory, fractal dimensions, and various analytical methods in chaos theory.

Semiconductors, which satisfy this condition, are also called extrinsic semiconductors. The free carrier density increases at high temperatures for which the intrinsic density approaches the net doping density and decreases at low temperatures due to incomplete ionization of the dopants. This article focuses on nonequilibrium carrier dynamics in these quantum dots, using the ability of recent developments in electrical and optical spectroscopy techniques.

All-electrical transconductance spectroscopy is introduced, where a two-dimensional electron gas serves as a fast and sensitive detector for the electron/hole dynamics and Cited by: 1. Intersubband excitations play an important role for the nonequilibrium carrier dynamics in quasi-two-dimensional semiconductors.

In this chapter, optical studies of ultrafast intersubband dynamics. Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics, Volume ISBN Springer-Berlag Berlin Heidelberg,p.

@article{osti_, title = {Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials}, author = {Kaindl, Robert A and Averitt, Richard D}, abstractNote = {Perhaps the most important aspect of contemporary condensed matter physics involves understanding strong Coulomb interactions between the large number of electrons in.

title = "Ultrafast non-equilibrium carrier dynamics in semiconductor laser mode-locking", abstract = "The mode-locking dynamics of a vertical external-cavity surface-emitting laser with saturable absorber is analyzed using a microscopic many-body : I. Kilen, C. Böttge, Jorg Hader, Stephan W Koch, Jerome V Moloney.

The influence of non-equilibrium carrier dynamics on pulse propagation through inverted semiconductor gain media is investigated. For this purpose, a fully microscopic many-body model is coupled to a Maxwell solver, allowing for a self-consistent investigation of the light-matter-coupling and carrier dynamics, the optical response of the laser and absorber in the multiple-quantum-well Author: C.

Böttge, Jorg Hader, I. Kilen, Stephan W Koch, Jerome V Moloney. Carrier cooling is of widespread interest in the field of semiconductor science. It is linked to carrier–carrier and carrier–phonon coupling and has profound implications for the photovoltaic performance of materials.

Recent transient optical studies have shown that a high carrier density in lead-halide perovskites (LHPs) can reduce the cooling rate through a “phonon bottleneck Author: Thomas R. Hopper, Andrei Gorodetsky, Ahhyun Jeong, Franziska Krieg, Franziska Krieg, Maryna I.

Bodna. A new type of field effect transistor is developed and realized. It is based on ballistic transport of hot electrons in a short GaAs channel.

The channel is restricted by two short period superlattices. The gate has a V-grove shape. The transconductance of this FET exceeds 1 Sm/: V. Trofimov, M.

Valeiko, N. Volchkov, A. Toropov, K. Zhuravlev, E. Kiseleva, S. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into.

The photo-Dember effect arises from the asymmetric diffusivity of photoexcited electrons and holes, which creates a transient spatial charge distribution and hence the buildup of a voltage.

Conventionally, a strong photo-Dember effect is only observed in semiconductors with a large asymmetry between the electron and hole mobilities, such as in GaAs or InAs, and is considered negligible in Cited by: Abstract. We report the realization of highly-efficient light emitting MOS devices which are based on hot-electron excitation of rare-earth ions implanted into SiO implantation of Gd + and Tb + ions yields emission wavelengths of nm and nm with external quantum efficiencies up to 1% and 16%, respectively.

The observed threshold electric fields for observing electroluminescence Cited by: 1. The influence of non-equilibrium carrier dynamics on pulse propagation through inverted semiconductor gain media is investigated.

For this purpose, a fully microscopic many-body model is coupled to a Maxwell solver, allowing for a self-consistent investigation of the light–matter-coupling and carrier dynamics, the optical response of the laser and absorber in the multiple-quantum-well Author: C.

Böttge, Jorg Hader, I. Kilen, Stephan W Koch, Jerome V Moloney. The technical focus of the EDISON series is on the fundamental physics and applications of nonequilibrium classical and quantum carrier dynamics in semiconductors, optoelectronic devices, and nanostructures.

Specific topics of particular interest include: Nonequilibrium carrier transport in bulk and nanostructured materials. Organizer, HCIS, Nonequilibrium Carrier Dynamics in Semiconductors, Berlin Member, Steering Committee, ESF Network ULTRA: Femtochemistry and Femtobiology () Member, Committee Ellis R.

Lippincott Award (Optical Society of America, ) Member, Committee Gustav-Hertz-Prize (Deutsche Physikalische Gesellschaft, ). General Information: EDISON 17 is the 17 th meeting of the international conference series formerly named Hot Carriers in Semiconductors (HCIS), first held in Modena, Italy in It will be held on August th, on the campus of the University of California, Santa primary focus of EDISON is to provide an international venue to discuss the latest progress in the field of.

28th International Conference on the Physics of Semiconductors Vienna, Austria () 11th International Workshop on Computational Electronics Vienna, Austria () 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors Chicago, Illinois, USA (). The book introduces the reader into the ultrafast nanoworld of graphene and carbon nanotubes, including their microscopic tracks and unique optical finger prints.

or in the semiconductor industry. Experimental Techniques for the Study of Ultrafast Nonequilibrium Carrier Dynamics in Graphene (Pages: ) Summary; PDF. Eckehard Schöll is the author of over publications in scientific journals, three books (Nonequilibrium Phase Transitions in Semiconductors (Springer ), The Physics of Instabilities in Solid State Electron Devices (Plenum Press, New York, ), and Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors (Cambridge University.

Theory of Transport Properties of Semiconductor Nanostructures (Electronic Materials Series) by Editor-Eckehard Schöll and a great selection of related books, art and collectibles available now at .Theory of Electron Transport in Semiconductors: A Pathway from Elementary Physics to Nonequilibrium Green Functions - Ebook written by Carlo Jacoboni.

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